Sumitomo Energy and Sony Declare the Joint-Development of the Globe's First Real Natural Semiconductor Laserlight Diode with over 100 mW Outcome Energy at 530 nm
Achieves Twice the Luminosity of Traditional Gallium Nitride Natural Laserlight Diodes
Sumitomo Energy Sectors, Ltd. ("Sumitomo Electric") and Sony Corporation ("Sony") have efficiently designed the first*1 semiconductor laser diode with an visual output control over 100 mW in true green area at a wave length of 530 nm. This laser diode can be installed on laser projectors and many other screen equipment. The new laser diode functions twice the luminosity*2 in contrast to conventional gallium nitride (GaN) green laser diodes, and a shade range enhanced by 182% depending on the NTSC conventional (CIE 1976 shade gamut)*3. As a result, these significantly improve the efficiency of laser projectors and other screen equipment to recreate vivid video and pictures.
Red and red laser diodes have been commercially available among the primary red-green-blue (RGB) colours, but there has been greater need for great output green laser diodes towards the development of powerful laser projectors and screen equipment. Currently, green laser treatment are generated by transforming the wave length of infra-red laser lighting from a lighting using visual materials, but the lighting is large and expensive. In addition, conventional GaN-based green laser treatment have difficulties achieving sufficient luminosity as their efficiency is limited to an output power several hundreds of milliwatt at a wave length of 520 nm or less.
To get over these difficulties, Sumitomo Energy and Sony worked with in the development of a real green semiconductor laser for realistic use, drawing on Sumitomo Electric's semi-polar GaN substrate, amazingly development, and wafer handling technologies, as well as Sony's GaN-based laser technological innovation, acquired through the Blu-ray development. By presenting new methods and helping the whole semiconductor laser development procedure, such as architectural style, amazingly development, wafer handling, and electrode settings, Sumitomo Energy and Sony were able to efficiently create true green semiconductor laser with an visual output power more than 100 mW at a wave length of 530 nm. This true green semiconductor laser diode is highly reliable as it understands wall-plug efficiency of over 8%.
The development of true green semiconductor laser diode finishes the three basic colours of the RGB laser lighting sources. Sumitomo Energy and Sony anticipate a wide range of applications for this technological innovation such as development into advanced laser projectors with great luminosity and wide shade range, as well as compact, lighting, energy-efficient laser projectors.
Sumitomo Energy and Sony will continue to mutually create true green semiconductor laser diode to achieve even higher output power, efficiency, and laser excellent.
- 1: As of this statement on May Twenty-first, 2012
- 2: Evaluation with GaN-based laser diodes of 60 mW or less at 520 nm or less
- 3: NTSC conventional comparison with the combination of the designed true green laser diode and the present red and red laser diode.
Main functions of the development
Sumitomo Energy and Sony have prevailed in the development of the first true green semiconductor laser diode that has an output control over 100 mW at 530 nm by using a semi-polar GaN substrate and helping the methods.
High excellent effective layer
A semi-polar {2021} GaN substrate aircraft is straight 75 degrees as opposed to normal GaN amazingly c-plane. The semi-polar GaN substrate enables the maintainable development of homogenous indium-based effective levels, leading to the successful development of a top excellent light-emitting part.
Wall-plug efficiency of more than 8%
In GaN-based green light-emitting equipment, lustrous efficiency decreases in saving money area due to the inner area results resulting from frame distortions in the amazingly framework and the resulting inner polarization. It is possible to reduce the inner area results by implementing semi-polar GaN substrates, but it is necessary to boost the whole laser development procedure such as architectural style, amazingly development, wafer handling, and electrode settings for their realistic use. Sumitomo Energy and Sony have prevailed in reducing the operating present and current in the laser through the optimization of the laser framework, impurity control in amazingly, and minimization of electrode resistance, and thus achieved an output power 100 mW and a wall-plug efficiency of more than 8% at a wave length of 530 nm.